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? auirfr8401 AUIRFU8401 v dss 40v r ds(on) typ. 3.2m ?? i d (silicon limited) 100a ? max. 4.25m ?? i d (package limited) 100a features ? advanced process technology ? new ultra low on-resistance ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for automotive applications, this hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast swit ching speed and ruggedized device design that hexfet power mosfets are well know n for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. 1 2016-1-28 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 100 ? a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 71 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 100 i dm pulsed drain current ? 400 p d @t c = 25c maximum power dissipation 79 w linear derating factor 0.53 w/c v gs gate-to-source voltage 20 v t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other conditio n beyond those indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for extended periods may affe ct device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and sti ll air conditions. ambient tem perature (ta) is 25c, unless otherwise specified. thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 1.9 c/w r ? ja junction-to-ambient ( pcb mount) ? ??? 50 r ? ja junction-to-ambient ??? 110 d-pak auirfr8401 i-pak AUIRFU8401 base part number package type standard pack form quantity AUIRFU8401 i-pak tube 75 AUIRFU8401 auirfr8401 d-pak tube 75 auirfr8401 tape and reel left 3000 auirfr8401trl orderable part number g d s gate drain source g s d d s g d avalanche characteristics e as single pulse avalanche energy (thermally limited) ? 67 e as (tested) single pulse avalanche energy (tested limited) ? 94 i ar avalanche current ? see fig. 14, 15, 24a, 24b a e ar repetitive avalanche energy ? mj mj applications ? electric power steering (eps) ? battery switch ? start/stop micro hybrid ? heavy loads ? dc-dc converter hexfet ? power mosfet
? auirfr/u8401 2 2016-1-28 notes: ?? calculated continuous current based on maximum allowable juncti on temperature. bond wire current limit is 100a by source bonding technology. note that current limitations arising fr om heating of the device leads may occur with some lead mounting arrangements. (refer to an-1140) ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? limited by t jmax , starting t j = 25c, l = 0.037mh, r g = 50 ? , i as = 60a, v gs =10v. ?? i sd ? 60a, di/dt ? 918a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 400 s; duty cycle ? 2%. ?? c oss eff . (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ?? c oss eff . (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? ? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 ? r ? ? is measured at t j approximately 90c . ? this value determined from sample failure population, starting t j = 25c, l=0.037mh, r g = 25 ? , i as = 60a, v gs =10v static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.035 ??? v/c reference to 25c, i d = 1.0ma ? r ds(on) static drain-to-source on-resistance ??? 3.2 4.25 m ??? v gs = 10v, i d = 60a ? v gs(th) gate threshold voltage 2.2 ??? 3.9 v v ds = v gs , i d = 50a i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 40v, v gs = 0v ??? ??? 150 v ds = 40v,v gs = 0v,t j =125c i gss ? gate-to-source forward leakage ??? ??? 100 na ? v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v r g internal gate resistance ??? 2.0 ??? ?? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) gfs forward trans conductance 198 ??? ??? s v ds = 10v, i d = 60a q g total gate charge ??? 42 63 nc ? i d = 60a q gs gate-to-source charge ??? 12 ??? v ds = 20v q gd gate-to-drain charge ??? 14 ??? v gs = 10v ? q sync total gate charge sync. (q g - q gd ) ??? 28 ??? t d(on) turn-on delay time ??? 7.9 ??? ns v dd = 20v t r rise time ??? 34 ??? i d = 30a t d(off) turn-off delay time ??? 25 ??? r g = 2.7 ?? t f fall time ??? 24 ??? v gs = 10v ? c iss input capacitance ??? 2200 ??? pf ? v gs = 0v c oss output capacitance ??? 340 ??? v ds = 25v c rss reverse transfer capacitance ??? 205 ??? ? = 1.0mhz, see fig. 5 c oss eff. (er) effective output capacitance (e nergy related) ??? 410 ??? v gs = 0v, v ds = 0v to 32v ? c oss eff. (tr) effective output capacitance (time related) ??? 495 ??? v gs = 0v, v ds = 0v to 32v ? diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 100 ? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 400 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 60a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ? ??? 3.2 ??? v/ns t j = 175c,i s = 60a,v ds = 40v ? t rr reverse recovery time ??? 28 ??? ns t j = 25c ??? 29 ??? t j = 125c q rr reverse recovery charge ??? 28 ??? nc t j = 25c ??? 31 ??? t j = 125c i rrm reverse recovery current ??? 1.6 ??? a t j = 25c v r = 34v, i f = 60a di/dt = 100a/s ?
? auirfr/u8401 3 2016-1-28 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 1 typical output characteristics fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage fig. 4 normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? ? ?
? auirfr/u8401 4 2016-1-28 ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage fig. 9 maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. drain current fig. 11 typical c oss stored energy fig 10. drain-to-source breakdown voltage 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a in c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0.1 1 10 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec 100sec dc l imited by package operation in this area limited by r ds (on) 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 39 40 41 42 43 44 45 46 47 48 49 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0 10 20 30 40 v ds, drain-to-source voltage (v) 0.0 0.1 0.2 0.3 e n e r g y ( j ) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.5a 20a bottom 60a
? auirfr/u8401 5 2016-1-28 notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.infineon.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 22a, 22b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 13, 14). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 15. maximum avalanche energy vs. temperature fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs. pulse width 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.01 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 60a
? auirfr/u8401 6 2016-1-28 fig 16. on-resistance vs. gate voltage fig. 18 - typical recovery current vs. di f /dt fig. 20 - typical recovery current vs. di f /dt fig. 19 - typical stored charge vs. di f /dt fig. 21 - typical stored charge vs. di f /dt 4 8 12 16 20 v gs , gate-to-source voltage (v) 0 4 8 12 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 60a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 1.0a fig. 17 - threshold voltage vs. temperature 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 i r r m ( a ) i f = 40a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 20 40 60 80 100 q r r ( n c ) i f = 40a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 20 40 60 80 100 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c
? auirfr/u8401 7 2016-1-28 fig 22. typical on-resistance vs. drain current 0 20 40 60 80 100 120 i d , drain current (a) 2.0 4.0 6.0 8.0 10.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 6.0v v gs = 10v
? auirfr/u8401 8 2016-1-28 ? fig 23. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 25a. switching time test circuit fig 25b. switching time waveforms fig 24a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24b. unclamped inductive waveforms t p v (br)dss i as fig 26b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 26a. gate charge test circuit
? auirfr/u8401 9 2016-1-28 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ d-pak (to-252aa) package outline (dimensions are shown in millimeters (inches)) ywwa xx ? xx date code y= year ww= work week aufr8401 lot code part number ir logo d-pak (to-252aa) part marking information
? auirfr/u8401 10 2016-1-28 ? i-pak (to-251aa) part marking information ywwa xx ? xx date code y= year ww= work week aufu8401 lot code part number ir logo i-pak (to-251aa) package outline (dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? auirfr/u8401 11 2016-1-28 d-pak (to-252aa) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
? auirfr/u8401 12 2016-1-28 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. d-pak msl1 i-pak esd machine model class m2 (+/- 200v) ? aec-q101-002 human body model ? class h1b (+/- 1000v) ? aec-q101-001 charged device model class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes moisture sensitivity level ? published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 12/14/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. 1/28/2016 ?? corrected qualification table (human body model value) on page 12. ? highest passing voltage.

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